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996 IP
851
0.0
32x8 Bits OTP (One-Time Programmable) IP, VI- 0.25μm 2.5V/3.3V Mixed Signal Process
The ATO00032X8VI250MS03NA is organized as a 32-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in VI- 0.25μm 2....
852
0.0
130GF_EEPROM_08 - 3.6Kbit EEPROM IP with configuration 28p8w16bit
130GF_EEPROM_08 IP is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6 Kbits, which is organized as 28 pages...
853
0.0
64X1 Bits OTP (One-Time Programmable) IP, Globa-Foundr--- 22nm FDX 0.8V/1.8V Process
The AT64X1G22GN0AA is organized as a 64-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in Globa-Foundr--- 22nm...
854
0.0
64x1 Bits OTP (One-Time Programmable) IP, TSM- 0.16um 1.8V/3.3V Process
The ATO00064X1TS160MSG3NA is organized as a 64-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18um CMOS ...
855
0.0
64x1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm SiGe BiCMOS 1.8V/3.3V General Purpose Process
The ATO00064X1TS180SGE3NA is organized as a 64-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 0.18μm S...
856
0.0
64x8 Bits OTP (One-Time Programmable) IP, Ca-Sem- 0.18μm 1.8V/3.3V Logic Process
The ATO00064X8CA180TGO3NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Ca-Sem- 0.18μ...
857
0.0
64x8 Bits OTP (One-Time Programmable) IP, Ca-Sem- 0.18μm pure 3.3V MS process
The ATO00064X8CA180M333NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in CanSemi 0.18...
858
0.0
64x8 Bits OTP (One-Time Programmable) IP, Ne-chi- 0.15μm 3.3V Logic Processes
The ATO00064X8NX150FPS3NA is organized as a 64x8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Ne-chi- 0.15μm 3.3V ...
859
0.0
64x8 Bits OTP (One-Time Programmable) IP, SMI- 0.18μm MSGL-GE-1.8-3.3 & MSGL-LC-3.3-3.3
The ATO00064X8SM180N333NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in SMIC 0.18μm ...
860
0.0
64x8 Bits OTP (One-Time Programmable) IP, TSM- 130nm BCD Plus Process
The ATO00064X8TS130BP53NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSMC 0.13μm ...
861
0.0
256x1 Bits OTP (One-Time Programmable) IP, Abli- 130 nm 130nm BCD with 5V CMOS Core Process
The ATO00256X1AB130MXX3XX00A is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.13µm s...
862
0.0
256x1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm 1.8V/3.3V Mixed-Signal, General Purpose Process
The ATO00256X1TS180MSG3NA is organized as a 256 bit by 1 one-time programmable (OTP).This is a kind of non-volatile memory fabricated in TSM- 0.18μm 1...
863
0.0
256x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE Process
The AT256X1U110MAE0AC is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in UM- 110 nm 1.2V/...
864
0.0
256x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE Process
The AT256X1U110MAE0AB is organized as 256 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memory...
865
0.0
256x1 Bits OTP (One-Time Programmable) IP, VI- 110 nm 1.2V/5.0V BCD Process
The AT256X1V110BCD0AA is organized as 256 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memory...
866
0.0
256x16 Bits OTP (One-Time Programmable) IP, 256x16 Bits One Time Programmable Device SMI- 110nm 1.2V/3.3V Mixed Signal Generic Process
The AT256X16Z110LL0AA is organized as 256 bits by 16 one-time programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memo...
867
0.0
256x16 Bits OTP (One-Time Programmable) IP, TSM- 152nm 1.8V/3.3V GP MS Process
The AT256X16T152LP0AA is organized as 256 bits by 16 one-time programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memo...
868
0.0
256X8 Bits OTP (One-Time Programmable) IP, SMI- 0.153μm MSGL-GE-1.8-3.3 Process
The ATO00256X1SM153MSG2NA is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in SMIC 0.153u...
869
0.0
256x8 Bits OTP (One-Time Programmable) IP, TSM- 0.13um 1.5V/3.3V LP Process
The AT256X8T130LP0AA is organized as a 256-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 0.13um 1.5V/...
870
0.0
256x8 Bits OTP (One-Time Programmable) IP, TSM- 40G 0.9/1.8V Process
The AT256X8T40G6AA is organized as 256 bits by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 40nm G standard...
871
0.0
4608x12 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 0.9V/2.5V Process
The ATO4608X12TS040ULP7ZA is organized as 4608 x 12 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP sta...
872
0.0
768 x 1 Bits One Time Programmable Device D- Hite- Mixed-Signal 110 nm 1.2V/3.3V Process
The ATO00768X1DB110SBM2NA is organized as 768 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile m...
873
0.0
768x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE
The AT768X1U110MAE0AA is organized as 768 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memor...
874
0.0
768x3 Bits OTP (One-Time Programmable) IP, UM- 142 nm 1.8V/3.3V CIS
The AT768X3U142CIS0AA is organized as 768-bits by 3 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in 0.142...
875
0.0
768x39 Bits OTP (One-Time Programmable) IP, TSM- 55ULP 0.9V–1.2V / 2.5V Process
The ATO0768X39TS055ULP4NL is organized as 768x39 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 55nm LP 1.2V/2....
876
0.0
36Kbyte EEPROM IP with configuration 288p32w32bit
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 36Kbyte (32(bit per word) x 32(words per page) x 2...
877
0.0
36Kbyte EEPROM IP with configuration 288p32w32bit and oscillator
130GF_EEPROM_07 is a nonvolatile electrically erasable programmable read-only memory with volume 36Kbyte (32(bit per word) x 32(words per page) x 288(...
878
0.0
16x16 Bits OTP (One-Time Programmable) IP, SMI- 0.18μm BCDM 1.8V/5V process
The ATO0016X16SM180BS33NA is organized as 16 bits by 16 one-time programmable (OTP) in 16-bit read and 1-bit program modes. This is a kind of non-vola...
879
0.0
16x8 Bits OTP (One-Time Programmable) IP, TSM- CM018G 0.18μm 1.8V/3.3V Process
The ATO00016X8TS180CMG3NA is organized as 16 bits by 8 one-time programmable (OTP) in 8-bit read and 1-bit program modes. This is a kind of non-volati...
880
0.0
16x8 Bits OTP (One-Time Programmable) IP, VI- 150nm 1.8V BCD Process
The ATO00016X8VI150BG22NA is organized as 16 bits by 8 one-time programmable in 8-bit read and 1-bit program modes. This is a kind of non-volatile m...
881
0.0
16x8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18um XH018 1.8V/3.3V process
The ATO00016X8XH18018P4DA is organized as a 16-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18µm XH018...
882
0.0
TCAM Compilers for Samsung (14nm, 10nm, SF5A, SF4X)
Synopsys embedded ternary content addressable memories (TCAMs) help networking designers meet the demand for wire-speed packet processing, access cont...
883
0.0
TCAM Compilers for SMIC (28nm)
Synopsys embedded ternary content addressable memories (TCAMs) help networking designers meet the demand for wire-speed packet processing, access cont...
884
0.0
TCAM Compilers for TSMC (65nm, 40nm, 28nm, 16nm, N7, N6, N5, N4
Synopsys embedded ternary content addressable memories (TCAMs) help networking designers meet the demand for wire-speed packet processing, access cont...
885
0.0
TCAM in SMIC 28HK+ upto 800Mbps
...
886
0.0
Secure Storage Solution for OTP IP
Synopsys Secure Storage Solution for OTP is an add-on solution to Synopsys One-Time-Programable (OTP) Non-Volatile Memory (NVM) IP, designed to addres...
887
0.0
Register File with low power retention mode and 3 speed options
Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm...
888
0.0
Register File with low power retention mode and 3 speed options
Low Leakage. Mobile Semiconductor's SP-ULD-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm F...
889
0.0
Register File with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL Register file memory compiler generates single-port Register File instances using the Bulk 22ULL proce...
890
0.0
memBrain™ Tile
...
891
0.0
ReRAM (RRAM) NVM in DB HiTek 130nm BCD (128Kb)
Weebit ReRAM (Resistive Random Access Memory) is an innovative Non-Volatile Memory (NVM) technology that can be easily integrated into any CMOS IC. ...
892
0.0
ReRAM (RRAM) NVM in DB HiTek 130nm BCD (1Mb)
Weebit ReRAM (Resistive Random Access Memory) is an innovative Non-Volatile Memory (NVM) technology that can be easily integrated into any CMOS IC. ...
893
0.0
ReRAM (RRAM) NVM in DB HiTek 130nm BCD (256Kb)
Weebit ReRAM (Resistive Random Access Memory) is an innovative Non-Volatile Memory (NVM) technology that can be easily integrated into any CMOS IC. ...
894
0.0
ReRAM (RRAM) NVM in DB HiTek 130nm BCD (512Kb)
Weebit ReRAM (Resistive Random Access Memory) is an innovative Non-Volatile Memory (NVM) technology that can be easily integrated into any CMOS IC. ...
895
0.0
ReRAM (RRAM) NVM in DB HiTek 130nm BCD (64Kb)
Weebit ReRAM (Resistive Random Access Memory) is an innovative Non-Volatile Memory (NVM) technology that can be easily integrated into any CMOS IC. ...
896
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 1024 k
Foundry Sponsored - Metal programmable ROM compiler - TSMC 90 nm LPeF - Non volatile memory optimized for low power - compiler range up to 1024 k...
897
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 256 k
Metal programmable ROM compiler - TSMC 65 nm LP - Non volatile memory optimized for low power - compiler range up to 256 k...
898
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 256 k
Foundry Sponsored - Metal programmable ROM compiler - TSMC 130 nm BCD - Non volatile memory optimized for low power - compiler range up to 256 k...
899
0.0
Metal programmable ROM compiler - Memory optimized for low power - Dual Voltage - compiler range up to 1024 k
Metal programmable ROM compiler - TSMC 130 nm G - Non volatile memory optimized for low power - Dual Voltage - compiler range up to 1024 k...
900
0.0
Metal programmable ROM compiler - Non volitile memory optimized for low power - compiler range up to 256 k
Metal programmable ROM compiler - TSMC 130 nm BCD Plus - Non volatile memory optimized for low power - compiler range up to 256 k...
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